Integrated optical devices and methos of forming the same

ABSTRACT

Integrated optical devices and methods of forming the same are disclosed. A method of forming an integrated optical device includes the following steps. A substrate is provided. The substrate includes, from bottom to top, a first semiconductor layer, an insulating layer and a second semiconductor layer. The second semiconductor layer is patterned to form a waveguide pattern. A surface smoothing treatment is performed to the waveguide pattern until a surface roughness Rz of the waveguide pattern is equal to or less than a desired value. A cladding layer is formed over the waveguide pattern.

BACKGROUND

Integrated optical devices such as waveguides are often used ascomponents in integrated optical circuits, which integrate multiplephotonic functions. The waveguides are used to confine and guide lightfrom a first point to a second point of an integrated chip (IC) withminimal attenuation. Although the existing waveguide structures havebeen generally adequate for their intended purposes, they have not beenentirely satisfactory in all respects.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the criticaldimensions of the various features may be arbitrarily increased orreduced for clarity of discussion.

FIG. 1A to FIG. 1O are schematic three-dimensional views of a method offorming an integrated optical device in accordance with someembodiments.

FIG. 2 to FIG. 6 are schematic three-dimensional views of variousintegrated optical devices in accordance with alternative embodiments.

FIG. 7 is a flow chart of a method of forming an integrated opticaldevice in accordance with some embodiments.

FIG. 8 is a flow chart of a method of forming an integrated opticaldevice in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a second feature over or on a first feature in the description thatfollows may include embodiments in which the second and first featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the second and first features,such that the second and first features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath”, “below”, “lower”,“on”, “over”, “overlying”, “above”, “upper” and the like, may be usedherein for ease of description to describe one element or feature'srelationship to another element(s) or feature(s) as illustrated in thefigures. The spatially relative terms are intended to encompassdifferent orientations of the device in use or step in addition to theorientation depicted in the figures. The apparatus may be otherwiseoriented (rotated 90 degrees or at other orientations) and the spatiallyrelative descriptors used herein may likewise be interpretedaccordingly.

FIG. 1A to FIG. 1O are schematic three-dimensional views of a method offorming an integrated optical device in accordance with someembodiments. It is understood that the disclosure is not limited by themethod described below. Additional operations can be provided before,during, and/or after the method and some of the operations describedbelow can be replaced or eliminated, for additional embodiments of themethods.

Although FIG. 1A to FIG. 1O are described in relation to a method, it isappreciated that the structures disclosed in FIG. 1A to FIG. 1O are notlimited to such a method, but instead may stand alone as structuresindependent of the method.

Referring to FIG. 1A, a wafer or a substrate S is provided. Thesubstrate S may be a semiconductor-on-insulator or silicon-on-insulator(SOI) substrate. For example, the substrate S includes, from bottom totop, a first semiconductor layer 101, an insulating layer 102 and asecond semiconductor layer 103. The first semiconductor layer 101 mayinclude silicon. The insulating layer 102 may include oxide, such assilicon oxide. The insulating layer 102 is referred to as a buried oxidelayer or a buried insulator in some examples. The second semiconductorlayer 103 may include silicon, such as single crystalline silicon. Insome embodiments, the top surface of the second semiconductor layer 103is provided with a surface roughness Rz of a few nanometers, such asabout 1 to about 2 nm. In some embodiments, the surface roughness Rz iscalculated by measuring the vertical distance from the highest peak tothe lowest valley within a predetermined sampling length or area. Insome embodiments, the top surface of the second semiconductor layer 103has a peak-to-valley surface roughness (3-sigma) of about 0.5 nm.

The SOI substrate is widely used in silicon photonics. The secondsemiconductor layer 103 (e.g., crystalline silicon layer) on theinsulator can be used to fabricate optical waveguides and other opticaldevices, either passive or active (e.g. through suitable implantations).The buried insulator enables propagation of infrared light in thesilicon layer on the basis of total internal reflection. The SOIsubstrate may be fabricated by a silicon direct bonding or a separationby implantation of oxygen (SIMOS) method. A seed method may be appliedto form the SOI substrate, in which the topmost silicon layer is growndirectly on the insulator.

Referring to FIG. 1B, a hard mask layer 104 is formed on the substrateS. Specifically, the hard mask layer 104 is blanket formed on the topsurface of the second semiconductor layer 103. In some embodiments, thehard mask layer 104 includes a material having a high etchingselectivity with respect to the underlying material (e.g., silicon). Forexample, the hard mask layer 104 includes carbide (e.g., siliconcarbide), nitride (e.g., silicon nitride), the like, or a combinationthereof. For example, the hard mask layer 104 includes SiN, SiC, SiCN,SiON, SiCON or a combination thereof. The hard mask layer 104 may have asingle-layer or multi-layer structure. The method of forming the hardmask layer 104 includes performing a suitable deposition process, suchas a physical vapor deposition (PVD) process, a chemical vapordeposition (CVD) process, a plasma enhanced chemical vapor deposition(PE-CVD) process, an atomic layer deposition (ALD) process, or the like.

Referring to FIG. 1C, a photoresist layer 106 is formed on the hard masklayer 104. The photoresist layer 106 is configured to define thesubsequently formed waveguide pattern. The photoresist layer 106 mayinclude a photosensitive material. In some embodiments, the method offorming the photoresist layer 106 includes coating a photoresistmaterial on the hard mask layer 104, exposing the photoresist materialto a light, and developing the exposed photoresist material. Thephotoresist material not associated with the waveguide pattern isremoved.

Referring to FIG. 1D, the hard mask layer 104 is patterned by using thephotoresist layer 106 as a mask, so as to form a patterned hard masklayer 104 a. In some embodiments, an etching process is performed byusing the photoresist layer 106 as an etching mask, so as to remove aportion of the hard mask layer 104. The etching process may include ananisotropic etching process, such as a dry etching process.

Upon the steps in FIG. 1C and FIG. 1D, the pattern of the photoresistlayer 106 is transferred to the hard mask layer 104. One problem in suchprocess is that the photoresist pattern with a small width is likely tochange its shape during processing. This deformation may be transferredinto the layer being etched, yielding an etch profile which deviatesfrom the intended shape, dimension or roughness. The etch-inducedphotoresist transformation may be classified in groups such as line edgeroughening, surface roughening, and line wiggling. Line edge roughness(LER) refers to the edge of the patterned line becoming more irregularas the pattern is transferred from the photoresist layer to theunderlying hard mask layer. In some embodiments, the patterned hard masklayer 104 a has a line edge roughness (LER) (3 sigma) of about 5 to 10nm.

Referring to FIG. 1E, the photoresist layer 106 is removed. In someembodiments, the photoresist layer 106 is removed or stripped by asuitable process, such as a plasma ashing process, a wet dip or both.

Referring to FIG. 1F, the second semiconductor layer 103 is pattered byusing the patterned hard mask layer 104 a as a mask, so as to form awaveguide pattern W. In some embodiments, an etching process isperformed by using the patterned hard mask layer 104 a as an etchingmask, so as to remove a portion of the second semiconductor layer 103.The etching process may include an anisotropic etching process, such asa dry etching process. In some embodiments, the etching process does notcompletely etch away the second semiconductor layer 103 uncovered by thepatterned hard mask layer 104 a, and instead leaves a thin un-etchedsilicon layer over the insulating layer 102. Specifically, the step ofpatterning the second semiconductor layer 103 includes forming a stripportion 103 a and two lining portions 103 b aside the strip portion 103a. In some embodiments, the strip portion 103 a has a height of about200 nm to about 350 nm, and a width of about 300 nm to about 500 nm. Insome embodiments, the height of each lining portion 103 b is less thanabout 1/10 the height of the strip portion 103 a. In some embodiments,each lining portion 103 b has a height of about 30 nm or less, such as25 nm, 20 nm, 15 nm, 10 nm or 5 nm, including any range between any twoof the preceding values. The height of each lining portion 103 b may beless than any one of the preceding values. In some embodiments, theheight of each lining portion 103 b may be approximately zero, such asfrom about 1 nm to about 3 nm.

In FIG. 1F, the lines schematically depicted on the strip portion 103 aand the lining portions 103 b are provided to indicate the degree ofsurface roughness. The greater the number of lines, the greater thesurface roughness. The smaller the number of lines, the lesser thesurface roughness. As shown in FIG. 1F, the waveguide pattern Wincluding the strip portion 103 a and the lining portions 103 b isinitially formed with a larger surface roughness. In some embodiments,the surface roughness Rz of the waveguide pattern W ranges from about 10nm to about 20 nm. In some embodiments, the surface roughness Rz iscalculated by measuring the vertical distance from the highest peak tothe lowest valley across the sidewall of the strip portion 103 a.

Referring to FIG. 1G, the surface of the waveguide pattern W is oxidizedto form an oxide layer 108. Specifically, the oxide layer 108 is formedon the sidewall of the strip portion 103 a and on the top surfaces ofthe lining portions 103 b. In some embodiments, a thermal oxidation oran oxidizing process P1 is performed to the waveguide pattern W in afurnace at a temperature of about 700 to about 1,200 degrees centigrade,such as from about 850 to about 950 degrees centigrade. A rapid thermaloxidation may be utilized in some examples.

The thermal oxidation is a way to produce a thin layer of oxide (usuallysilicon oxide) on the surface of the waveguide pattern W. The techniqueforces an oxidizing agent to diffuse into a semiconductor layer at ahigh temperature and react with it. In some embodiments, the oxidizingagent includes oxygen (O₂), ozone (O₃), the like, or a combinationthereof. The oxidizing ambient may also contain several percent ofhydrochloric acid (HCl). The chlorine in hydrochloric acid removes, ifany, undesired metal ions. Its presence also increases the rate ofoxidation.

The oxidizing agent consumes a surface portion of the waveguide patternW. Specifically, the oxide layer 108 grows both down into the waveguidepattern W and up out of it. Besides, silicon oxide may be grown fasterfor large silicon grains but slower for smaller silicon grains, andthus, the oxidizing agent consumes more for larger silicon grains butless for smaller silicon grains. In some embodiments, the thickness ofthe oxide layer 108 formed by the oxidizing process P1 ranges from 1 nmto 20 nm, such as 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm,11 nm, 12 nm, 13 nm, 14 nm, 15 nm, 16 nm, 17 nm, 18 nm or 19 nm,including any range between any two of the preceding values. Thethickness of the oxide layer 108 may be more than any one of thepreceding values.

Referring to FIG. 1H, the oxide layer 108 is removed from the surface ofthe waveguide pattern W. In some embodiments, an etching process P2 isperformed to remove the oxide layer 108 by an etching agent having ahigh etching selectivity with respect to the underlying material (e.g.,silicon). In some embodiments, a buffered oxide etch (BOE), also knownas buffered HF or BHF, is used to remove the silicon oxide layer 108. Insome embodiments, the BOE is a mixture of buffering agents, such asammonium fluoride (NH₄F) and hydrofluoric acid (HF). The BOE may etchaway silicon oxide quickly under good process control.

The oxidizing process P1 of FIG. 1G and the etching process P2 in FIG.1H constitute one cycle of the surface smoothing treatment. In someembodiments, upon one cycle of the surface smoothing treatment, thesurface roughness of the waveguide pattern W is reduced to less thanabout ½ of its original roughness. In some embodiments, the surfaceroughness Rz of the waveguide pattern W after one cycle of the surfacesmoothing treatment ranges from about 1 nm to about 10 nm.

Referring to FIG. 1I and FIG. 1J, another cycle of the surface smoothingtreatment is performed to the waveguide pattern W. Specifically, asshown in FIG. 1I, the surface of the waveguide pattern W is oxidized toform another oxide layer 108. The step of FIG. 1I is similar to the stepof FIG. 1G, so the details are not iterated herein. Thereafter, theoxide layer 108 is removed from the surface of the waveguide pattern W.The step of FIG. 1J is similar to the step of FIG. 1H, so the detailsare not iterated herein. In some embodiments, upon two cycles of thesurface smoothing treatment, the surface roughness of the waveguidepattern W is reduced to less than about 1/10 of its original roughness.In some embodiments, the surface roughness Rz of the waveguide pattern Wafter two cycles of the surface smoothing treatment ranges from about 1nm to about 2 nm. In some embodiments, the sidewall of the strip pattern103 a of the waveguide pattern W has a peak-to-valley surface roughness(3-sigma) of about 0.5 nm or less, such as about 0.3 nm or less. In someembodiments, the waveguide pattern W has a line edge roughness (LER) (3sigma) of about 0.5 nm or less, such as about 0.3 nm or less.

From another point of view, the oxidizing step of FIG. 1G and theetching step of FIG. 1H constitute a cycle of a cyclic oxidation andetching process. In the cyclic oxidation and etching process, anoxidizing step and an etching step are performed successively andcircularly without interruption. The above embodiments in which thecyclic oxidation and etching process includes two cycles of oxidationand etching steps are provided for illustration purposes, and are notconstrued as limiting the present disclosure. In some embodiments, theoxidizing step of FIG. 1G and the etching step in FIG. 1H may beperformed alternately as many times as needed, until the waveguidepattern W is formed with a desired surface roughness. Specifically, thecyclic oxidation and etching process may include m cycles of oxidationand etching steps, and m is a positive integer. For examples, m is aninteger from 1 to 5. The cyclic oxidation and etching process arebeneficial to reduce the surface roughness Rz and the line edgeroughness (LER) of the waveguide pattern W.

In some embodiments, the cyclic oxidation and etching process may beperformed in different chambers. However, the present disclosure is notlimited thereto. In alternative embodiments, the cyclic oxidation andetching process may be performed in the same chamber as needed.

Referring to FIG. 1K, after the waveguide pattern W is formed with adesired surface roughness by the above surface smoothing treatment, afinal oxide layer 110 is formed on the waveguide pattern W.Specifically, the final oxide layer 110 is formed on the sidewall of thestrip portion 103 a and on the top surfaces of the lining portions 103b. In some embodiments, the step of FIG. 1K is similar to the step ofFIG. 1G, so the details are not iterated herein. In some embodiments,the thickness of the final oxide layer 110 formed by an oxidizingprocess P1 ranges from 1 nm to 20 nm, such as 2 nm, 3 nm, 4 nm, 5 nm, 6nm, 7 nm, 8 nm, 9 nm, 10 nm, 11 nm, 12 nm, 13 nm, 14 nm, 15 nm, 16 nm,17 nm, 18 nm or 19 nm, including any range between any two of thepreceding values. The thickness of the final oxide layer 110 may be morethan any one of the preceding values.

Referring to FIG. 1L, the final oxide layer 110 is optionally nitridizedto form a nitrided oxide layer 111. Specifically, the nitrided oxidelayer 111 is formed on the sidewall of the strip portion 103 a and onthe top surfaces of the lining portions 103 b. The nitrided oxide layermay be referred to as a nitrided silicon oxide layer or a nitridizedoxide layer in some examples. In some embodiments, a nitridizing processP3 is performed to the waveguide pattern W, so as to nitridize the oxidelayer 110. The step in FIG. 1L may be referred to as a plasmanitridization or a nitrogen plasma implantation in some examples. Arapid thermal annealing may be utilized in some examples.

In some embodiments, the nitridizing process P3 includes N₂, NH₃, NH₄,NHx (wherein x is between 0 and 1), the like or a combination thereof.In some embodiments, the nitridizing process P3 is performed with a purenitrogen gas. In alternative embodiments, the nitrogen-containingambient may be diluted with an inert gas such as, for example, argon(Ar), helium (He), neon (Ne), or a mixture thereof. In some embodiments,the amount of nitrogen is greater than the amount of argon, so as toeffectively nitridize the oxide layer 110. In some embodiments, thenitridizing process P3 includes argon and nitrogen, and the volume ratioof argon to the nitrogen ranges from about 1:1 to about 1:20, such as1:2, 1:5, 1:10 or 1:15, including any range between any two of thepreceding values. The volume ratio of the argon to the nitrogen may beless than any one of the preceding values.

From another point of view, notwithstanding whether thenitrogen-containing ambient is employed neat (i.e., non-diluted) ordiluted, the content of nitrogen within the nitrogen-containing ambientemployed in the present disclosure is typically from about 50% to 100%.The nitrided oxide layer 111 is formed by nitridizing the oxide layer110 with the nitrogen-containing plasma. In some embodiments, thenitrided oxide layer 111 includes a nitrogen atom content of about 1-30at %.

Referring to FIG. 1M, the patterned hard mask layer 104 a is removedfrom the top surface of the waveguide pattern W. Specifically, the topsurface of the strip portion 103 a of the waveguide pattern W is exposedafter the patterned hard mask layer 104 a is removed. In someembodiments, the patterned hard mask layer 104 a is removed by asuitable process, such as an etching process.

In some embodiments, the top surface of the strip portion 103 a of thewaveguide pattern W may be either left uncovered and exposed to air(e.g. for sensing applications). In alternative embodiments, the topsurface of the waveguide pattern W may be covered with a cladding layer,which will be described in details below.

Referring to FIG. 1N, a cladding layer 112 is optionally formed over thewaveguide pattern W. Specifically, the cladding layer 112 is blanketformed on the second semiconductor layer 103, covering the waveguidepattern W. In some embodiments, the cladding layer 112 includes oxide,such as silicon oxide or the like. The cladding layer 112 may have asingle-layer or multi-layer structure. The method of forming thecladding layer 112 includes performing a suitable deposition process,such as a physical vapor deposition (PVD) process, a chemical vapordeposition (CVD) process, a plasma enhanced chemical vapor deposition(PE-CVD) process, an atomic layer deposition (ALD) process, or the like.

Referring toFIG. 1O, the cladding layer 112 is planarized. In someembodiments, the planarizing process includes a chemical mechanicalpolishing (CMP) process. An etching back process may be utilized in someexamples. The cladding layer 112 has a substantially planar top surface.The integrated optical device 10 of the disclosure is thus completed.

In the above embodiments, the step of patterning the secondsemiconductor layer in FIG. 1F includes forming a waveguide pattern witha strip portion and two thin lining portions. However, the presentdisclosure is not limited thereto. In alternative embodiments, the stepof patterning the second semiconductor layer in FIG. 1F may form awaveguide pattern with a different shape.

In some embodiments, the etching process of FIG. 1F completely etchesaway the second semiconductor layer 103 uncovered by the patterned hardmask layer 104 a, and therefore exposes the underlying insulating layer102. Specifically, the step of patterning the second semiconductor layer103 includes forming a standalone strip portion 103 a. In someembodiments, the strip portion 103 a has a height of about 200 nm toabout 350 nm, and a width of about 300 nm to about 500 nm. Other processsteps are similar to those described above, and thus, an integratedoptical device 20 of the disclosure is formed.

Each of the integrated optical devices 10 and 20 may be referred to as astrip silicon waveguide in some examples. The strip silicon waveguide ofthe disclosure has a smaller bending radius, and is able tosignificantly confine the light due to its strong refractive indexcontrast to its cladding layer (n_(r_Si)=˜3.47 vs n_(r_SiO2)=˜1.45). Thestrip silicon waveguide of the disclosure has an ultra-low surfaceroughness (Rz=1˜2 nm), so the light transmission loss due to scatteringis dramatically reduced.

In some embodiments, the etching process of FIG. 1F does not completelyetch away the second semiconductor layer 103 uncovered by the patternedhard mask layer 104 a, and instead leave a thick unetched silicon layerover the insulating layer 102. Specifically, the step of patterning thesecond semiconductor layer 103 includes forming a strip portion 103 aand two slab portions 103 c aside the strip portion 103 a. In someembodiments, the strip portion 103 a has a height of about 200 nm toabout 350 nm, and a width of about 300 nm to about 500 nm. In someembodiments, the height of each slab portion 103 c is about ½-⅕ (e.g.,about ⅓ to ¼) the height of the strip portion 103 a. In someembodiments, each slab portion 103 c has a height of about 40 nm toabout 160 nm, such as about 70 nm to about 140 nm. For example, eachslab portion 103 c has a height of about 80 nm, 90 nm, 100 nm, 110 nm,120 nm or 130 nm, including any range between any two of the precedingvalues. The height of each slab portion 103 c may be less than or morethan any one of the preceding values as needed. Other process steps aresimilar to those described above, and thus, an integrated optical device30 of the disclosure is formed.

The integrated optical device 30 may be referred to as a rib siliconwaveguide in some examples. The rib silicon waveguide needs a largerbending radius to mitigate light scape loss. Nevetheless, it is alsoable to achieve ultra-low surface roughness (Rz=1˜2 nm), so the lighttransmission loss due to scattering is dramatically reduced. The ribwaveguide can be utilized to form an active waveguide by doping the slabportions and connecting the doped slab portions to electrodes tomodulate light propagation.

In the above methods of forming the integrated optical devices 10, 20and 30, the step of removing the patterned hard mask layer is performedafter the step of nitridizing the final oxide layer on the waveguidepattern, so the nitridizing step is performed to the sidewall of thewaveguide pattern rather than the top surface of the waveguide patterncovered by the patterned hard mask layer. However, the presentdisclosure is not limited thereto. In alternative embodiments, the stepof removing patterned hard mask layer is performed before the step ofnitridizing the final oxide layer on the waveguide pattern, so thenitridizing step is performed to the sidewall and the top surface of thewaveguide pattern. Other process steps are similar to those describedabove, and thus, integrated optical devices 11, 21 and 31 of thedisclosure are formed, as shown in FIG. 4 to FIG. 6.

FIG. 7 illustrates a method 200 of forming an integrated optical devicein accordance with some embodiments. Although the method 200 isillustrated and/or described as a series of acts or events, it will beappreciated that the method is not limited to the illustrated orderingor acts. Thus, in some embodiments, the acts may be carried out indifferent orders than illustrated, and/or may be carried outconcurrently. Further, in some embodiments, the illustrated acts orevents may be subdivided into multiple acts or events, which may becarried out at separate times or concurrently with other acts orsub-acts. In some embodiments, some illustrated acts or events may beomitted, and other un-illustrated acts or events may be included.

At act 202, a substrate is provided, and the substrate includes, frombottom to top, a first semiconductor layer, an insulating layer and asecond semiconductor layer. FIG. 1A illustrates a three-dimensional viewcorresponding to some embodiments of act 202.

At act 204, a patterned hard mask layer is formed on the secondsemiconductor layer. FIG. 1B to FIG. 1E illustrate three-dimensionalviews corresponding to some embodiments of act 204.

At act 206, the second semiconductor layer is patterned by using thepatterned hard mask as a mask, so as to form a waveguide pattern. FIG.1F illustrates a three-dimensional view corresponding to someembodiments of act 206.

At act 208, a surface of the waveguide pattern is oxidized to form anoxide layer. FIG. 1G illustrates a three-dimensional view correspondingto some embodiments of act 208.

At act 210, the oxide layer is etched. FIG. 1H illustrates athree-dimensional view corresponding to some embodiments of act 210.

At act 212, the oxidizing step and the etching step are repeatedalternately multiple times, until the waveguide pattern is formed with adesired surface roughness. FIG. 1I to FIG. 1J illustratethree-dimensional views corresponding to some embodiments of act 212.

At act 214, a nitrided oxide layer is formed on the waveguide pattern.FIG. 1K to FIG. 1L illustrate three-dimensional views corresponding tosome embodiments of act 214. In some embodiments, an oxide layer isformed on the waveguide pattern, and the oxide layer is nitridized.

At act 216, the patterned hard mask layer is removed. FIG. 1Millustrates a three-dimensional view corresponding to some embodimentsof act 216.

In some embodiments, act 216 is performed after act 214. However, thepresent disclosure is not limited thereto. The sequence of act 214 andact 216 may be exchanged as needed. In alternative embodiments, act 216is performed before act 214.

At act 218, a cladding layer is formed over the waveguide pattern. FIG.1N to FIG. 10 illustrate three-dimensional views corresponding to someembodiments of act 218. In some embodiments, a cladding layer is formedover the waveguide pattern, and the cladding layer is planarized.

FIG. 8 illustrates a method 300 of forming an integrated optical devicein accordance with some embodiments. Although the method 300 isillustrated and/or described as a series of acts or events, it will beappreciated that the method is not limited to the illustrated orderingor acts. Thus, in some embodiments, the acts may be carried out indifferent orders than illustrated, and/or may be carried outconcurrently. Further, in some embodiments, the illustrated acts orevents may be subdivided into multiple acts or events, which may becarried out at separate times or concurrently with other acts orsub-acts. In some embodiments, some illustrated acts or events may beomitted, and other un-illustrated acts or events may be included.

At act 302, a substrate is provided, and the substrate includes, frombottom to top, a first semiconductor layer, an insulating layer and asecond semiconductor layer. FIG. 1A illustrates a three-dimensional viewcorresponding to some embodiments of act 302.

At act 304, the second semiconductor layer is patterned to form awaveguide pattern. FIG. 1B to FIG. 1F illustrate three-dimensional viewscorresponding to some embodiments of act 304. In some embodiments, thestep of patterning the second semiconductor layer includes forming astrip portion and a lining portion aside the strip portion, as shown inFIG. 1F and FIG. 4. In some embodiments, the step of patterning thesecond semiconductor layer includes forming a standalone strip portion,as shown in FIG. 2 and FIG. 5. In some embodiments, the step ofpatterning the second semiconductor layer includes forming a stripportion and a slab portion aside the strip portion, as shown in FIG. 3and FIG. 6.

At act 306, a surface smoothing treatment is performed to the waveguidepattern until a surface roughness Rz of the waveguide pattern is equalto or less than 2 nm. FIG. 1G to FIG. 1J illustrate three-dimensionalviews corresponding to some embodiments of act 306. In some embodiments,the surface smoothing treatment is performed on a sidewall of thewaveguide pattern rather than on a top surface of the waveguide pattern.In some embodiments, the surface smoothing treatment includes a cyclicoxidation and etching process.

At act 308, an insulating layer is formed on the waveguide pattern. FIG.1K illustrates a three-dimensional view corresponding to someembodiments of act 308.

At act 310, the insulating layer is nitridized. FIG. 1L illustrates athree-dimensional view corresponding to some embodiments of act 310.

At act 312, a cladding layer is formed over the waveguide pattern. FIG.1N to FIG. 10 illustrate three-dimensional views corresponding to someembodiments of act 312.

The structures of the integrated optical devices of the disclosure areillustrated below with reference toFIG. 1O and FIG. 2 to FIG. 6.

In some embodiments, an integrated optical device 10/11/20/21/30/31includes a waveguide pattern W. The waveguide pattern W is disposed onan insulating layer 102 and includes a strip portion 103 a, and asurface roughness Rz of a sidewall of the strip portion 103 a of thewaveguide pattern W is equal to or less than a surface roughness Rz of atop surface of the strip portion 103 a of the waveguide pattern W. Insome embodiments, the surface roughness Rz of the sidewall of thewaveguide pattern is equal to or less than about 2 nm, such as equal toor less than about 1 nm.

In some embodiments, the waveguide pattern W further includes a liningportion 103 b aside the strip portion 103 a, and the thickness of thelining portion 103 b is equal to or less than about 30 nm, as shown inFIG. 1O and FIG. 4. In some embodiments, the waveguide pattern W merelyincludes a standalone strip portion, as shown in FIG. 2 and FIG. 5. Insome embodiments, the waveguide pattern W further includes a slabportion 103 c aside the strip portion 103 a, and the thickness of theslab portion ranges from about 40 nm to about 160 nm, such as from about70 nm to about 140 nm, as shown in FIG. 3 and FIG. 6.

In some embodiments, a nitrided oxide layer 111 is further included inthe integrated optical device 10/11/20/21/30/31. In some embodiments,the nitrided oxide layer 111 is disposed on the sidewall of the stripportion 103 a of the waveguide pattern W. In some embodiments, thenitrided oxide layer 111 is further disposed on the top surface of thelining portion 103 b of the waveguide pattern W, as shown in FIG. 1O andFIG. 4. In some embodiments, the nitrided oxide layer 111 is furtherdisposed on the top surface of the slab portion 103 c of the waveguidepattern W, as shown in FIG. 3 and FIG. 6. In some embodiments, thenitrided oxide layer 111 is disposed on the top surface of the stripportion 103 a of the waveguide pattern W, as shown in FIG. 4 to FIG. 6.

In some embodiments, the nitrided oxide layer 111 has a thickness of1-20 nm. In some embodiments, the nitrided oxide layer 111 includes anitrogen atom content of 1-30 at %, such as 5 at %, 10 at %, 15 at %, 20at % or 25 at %, including any range between any two of the precedingvalues. In alternative embodiments, the nitrided oxide layer 111 mayhave a nitrogen atom content of greater than zero and less than any oneof the preceding values. In yet alternative embodiments, the nitridedoxide layer 111 may have a nitrogen atom content of more than any one ofthe preceding values.

In some embodiments, a cladding layer 120 is further included in theintegrated optical device 11/20/21/30/31he cladding layer 120 isdisposed over the waveguide pattern W. In some embodiments, the claddinglayer 120 is in physical contact with the top surface of the stripportion 103 a of the waveguide pattern W, as show in FIG. 1O, FIG. 2 andFIG. 3. In some embodiments, the cladding layer 120 is not in physicalcontact with the top surface of the strip portion 103 a of the waveguidepattern W, as show in FIG. 4 to FIG. 6.

In view of the above, with the method of the disclosure, the surfaceroughness and the line edge roughness (LER) of the waveguide are greatlyreduced, so as to provide a significantly low loss light transmission,and therefore improve the performance of the waveguide. In someembodiments, the cyclic oxidation and etching process of the disclosureis beneficial to reduce the surface roughness of the waveguide to lessthan 1/10 (e.g., less than 1/20) of its original roughness.

The above embodiments in which the surface smoothing treatment isapplied to form a waveguide pattern are provided for illustrationpurposes, and are not construed as limiting to the present disclosure.In some embodiments, the surface smoothing treatment may be applied toform an integrated circuit pattern with low surface roughness.

In accordance with some embodiments of the present disclosure, a methodof forming an integrated optical device includes the following steps. Asubstrate is provided. The substrate includes, from bottom to top, afirst semiconductor layer, an insulating layer and a secondsemiconductor layer. The second semiconductor layer is patterned to forma waveguide pattern. A surface smoothing treatment is performed to thewaveguide pattern until a surface roughness Rz of the waveguide patternis equal to or less than a desired value, A cladding layer is formedover the waveguide pattern.

In accordance with alternative embodiments of the present disclosure, amethod of forming an integrated optical device includes the followingsteps. A substrate is provided, and the substrate includes, from bottomto top, a first semiconductor layer, an insulating layer and a secondsemiconductor layer. A patterned hard mask layer is formed on the secondsemiconductor layer. The second semiconductor layer is patterned byusing the patterned hard mask as a mask, so as to form a waveguidepattern. A surface of the waveguide pattern is oxidized to form an oxidelayer. The oxide layer is etched. The oxidizing step and the etchingstep are repeated alternately multiple times, until the waveguidepattern is formed with a desired surface roughness.

In accordance with yet alternative embodiments of the presentdisclosure, an integrated optical device includes a waveguide pattern, anitrided oxide layer and a cladding layer. The waveguide pattern isdisposed on an insulating layer and includes a strip portion, and asurface roughness Rz of a sidewall of the strip portion of the waveguidepattern is equal to or less than a surface roughness Rz of a top surfaceof the strip portion of the waveguide pattern. The nitrided oxide layeris disposed on the sidewall of the strip portion of the waveguidepattern. The cladding layer is disposed over the waveguide pattern.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

1. A method of forming an integrated optical device, comprising:providing a substrate comprising, from bottom to top, a firstsemiconductor layer, an insulating layer and a second semiconductorlayer; patterning the second semiconductor layer to form a waveguidepattern; performing a surface smoothing treatment to the waveguidepattern until a surface roughness Rz of the waveguide pattern is equalto or less than a desired value; and forming a cladding layer over thewaveguide pattern, wherein the surface smoothing treatment comprises acyclic oxidation and etching process.
 2. The method of claim 1, whereinthe desired value is 2 nm.
 3. The method of claim 1, wherein the surfacesmoothing treatment is performed on a sidewall of the waveguide patternrather than on a top surface of the waveguide pattern.
 4. (canceled) 5.The method of claim 1, wherein the step of patterning the secondsemiconductor layer comprises forming a strip portion.
 6. The method ofclaim 5, wherein the step of patterning the second semiconductor layerfurther comprises forming a lining portion or a slab portion aside thestrip portion.
 7. The method of claim 1, further comprising, afterperforming the surface smoothing treatment and before forming thecladding layer, forming an insulating layer on the waveguide pattern;and nitridizing the insulating layer.
 8. A method of forming anintegrated optical device, comprising: providing a substrate comprising,from bottom to top, a first semiconductor layer, an insulating layer anda second semiconductor layer; forming a patterned hard mask layer on thesecond semiconductor layer; patterning the second semiconductor layer byusing the patterned hard mask as a mask, so as to form a waveguidepattern; oxidizing a surface of the waveguide pattern to form an oxidelayer; etching the oxide layer; and repeating the oxidizing step and theetching step alternately multiple times, until the waveguide pattern isformed with a desired surface roughness.
 9. The method of claim 8,further comprising forming a nitrided oxide layer on the waveguidepattern after the repeating step.
 10. The method of claim 9, furthercomprising removing patterned hard mask layer after forming the nitridedoxide layer on the waveguide pattern.
 11. The method of claim 9, furthercomprising removing patterned hard mask layer before forming thenitrided oxide layer on the waveguide pattern.
 12. The method of claim9, wherein forming the nitrided oxide layer comprises: forming an oxidelayer on the waveguide pattern; and nitridizing the oxide layer.
 13. Themethod of claim 8, further comprising, forming a cladding layer over thewaveguide pattern; and planarizing the cladding layer.
 14. An integratedoptical device, comprising: a waveguide pattern, disposed on aninsulating layer and comprising a strip portion, wherein a surfaceroughness Rz of a sidewall of the strip portion of the waveguide patternis equal to or less than a surface roughness Rz of a top surface of thestrip portion of the waveguide pattern; a nitrided oxide layer, disposedon the sidewall of the strip portion of the waveguide pattern; and acladding layer, disposed over the waveguide pattern.
 15. The integratedoptical device of claim 14, wherein the surface roughness Rz of thesidewall of the strip portion of the waveguide pattern is equal to orless than 2 nm.
 16. The integrated optical device of claim 14, whereinthe waveguide pattern further comprises a lining portion aside the stripportion, wherein the thickness of the lining portion is equal to or lessthan 30 nm.
 17. The integrated optical device of claim 14, wherein thewaveguide pattern further comprises a slab portion aside the stripportion, wherein the thickness of the slab portion ranges from 70 nm to140 nm.
 18. The integrated optical device of claim 14, wherein thenitrided oxide layer is further disposed on the top surface of the stripportion of the waveguide pattern.
 19. The integrated optical device ofclaim 14, wherein the nitrided oxide layer has a thickness of 1-20 nm.20. The integrated optical device of claim 14, wherein the nitridedoxide layer comprises a nitrogen atom content of 1-30 at %.
 21. Theintegrated optical device of claim 14, wherein the nitridized oxidelayer is disposed between the waveguide pattern and the cladding layer.